IXTP16N50P डाटा शीट PDF( Datasheet )

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA16N50P IXTP16N50P IXTQ16N50P VDSS = ID25 = ≤ RDS(on) 500V 16A 400mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt P

isc N-Channel MOSFET Transistor IXTP16N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-

isc N-Channel MOSFET Transistor IXTP16N50PM ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 420mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot

Advance Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) IXTP16N50PM VDSS = ID25 = RDS(on) ≤ 500V 7.5A 420mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVER