IXTP152N085T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA152N085T IXTP152N085T VDSS = ID25 = RDS(on) ≤ 85 152 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRM

isc N-Channel MOSFET Transistor IXTP152N085T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L