IXTP130N10T डाटा शीट PDF( Datasheet )

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.1mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tst

isc N-Channel MOSFET Transistor IXTP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo