डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTM21N50 | MOSFET MegaMOSTMFET
IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode
VDSS 500 V 500 V
ID25
RDS(on)
21 A 0.25 Ω 24 A 0.23 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Cond |
IXYS Corporation |
|
IXTM21N50 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 250mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |