IXTK33N50 डाटा शीट PDF( Datasheet )

High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Ω Preliminary data Symbol Test conditions VDSS VDGR VGS VGSM ID25 IDM TJ = 25°C to 150°C TJ

isc N-Channel MOSFET Transistor IXTK33N50 ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 60mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot var