डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTK170N10P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTT170N10P IXTQ170N10P IXTK170N10P
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions |
IXYS |
|
IXTK170N10P | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTK170N10P
·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.009Ω(Max) ·Fast Switching |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |