IXTH96N20P डाटा शीट PDF( Datasheet )

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS V GSM ID25 ID(RMS) ID

isc N-Channel MOSFET Transistor FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation