IXTH50P10 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot var

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V - 50A 55mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL