IXTH26N60P डाटा शीट PDF( Datasheet )

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va