IXTH250N075T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH250N075T IXTQ250N075T VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR

isc N-Channel MOSFET Transistor IXTH250N075T ·FEATURES ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lo