डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH20N60 | N-Channel MOSFET MegaMOSTMFET
Obsolete: IXTM20N60
N-Channel Enhancement Mode
IXTH 20N60 IXTM 20N60
VDSS = 600 V
ID25 = 20 A RDS(on) = 0.35 Ω
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXTH)
VDSS V
DGR
VGS VGSM ID |
IXYS |
|
IXTH20N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.35Ω(Max) ·100% avalanche tested ·Minimu |
INCHANGE |
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