डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH1N100 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 1.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1000V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11Ω(Max) ·100% avalanche tested ·Minimu |
INCHANGE |
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IXTH1N100 | High-Voltage MOSFET Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTH 1N100 IXTT 1N100
V DSS
ID25
RDS(on)
= 1000 V = 1.5 A = 11 Ω
Symbol
Test Conditions
V DSS
VDGR VG |
IXYS Corporation |
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