IXTH182N055T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH182N055T IXTQ182N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 182 5.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDG

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari