IXTH180N10T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari