IXTA80N10T डाटा शीट PDF( Datasheet )

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot vari

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 14 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt P