डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA76N25T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
|
IXTA76N25T | Power MOSFET TrenchTM Power MOSFET
N-Channel Enhancement Mode
IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T
VDSS = ID25 =
RDS(on)
250V 76A 44m
Typical Avalanched BV = 300V
TO-263 AA (IXTA)
TO-220AB (IXTP)
TO-3P |
IXYS |
www.DataSheet.in | 2017 | संपर्क |