IXTA56N15T डाटा शीट PDF( Datasheet )

TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXTA56N15T IXTP56N15T VDSS ID25 RDS(on) = 150V = 56A ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol VDSS VDGR VGS

isc N-Channel MOSFET Transistor IXTA56N15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 36mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-