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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA4N80P | Power MOSFET Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) ≤ 3.4
V A Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR |
IXYS |
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IXTA4N80P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.4Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
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