डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA2N100 | High Voltage MOSFET High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSO |
IXYS Corporation |
|
IXTA2N100 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variati |
INCHANGE |
|
IXTA2N100P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY2N100P IXTA2N100P IXTP2N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25 |
IXYS |
|
IXTA2N100P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |