डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA180N10T | Power MOSFET TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA180N10T IXTP180N10T
VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ
TO-263 (IXTA)
Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg |
IXYS Corporation |
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IXTA180N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IXTA180N10T7 | Power MOSFET PreliminaryTechnical Information
TrenchMVTM
IXTA180N10T7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 180 6.4
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILRMS IDM IAR E |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |