IXTA160N10T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-263 (IXTA) Symbol VDSS VDGR V

isc N-Channel MOSFET Transistor IXTA160N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lo

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS