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IXTA110N055T डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

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IXTA110N055T   Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILR
IXYS Corporation
IXYS Corporation
PDF
IXTA110N055T   N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari
INCHANGE
INCHANGE
PDF
IXTA110N055T2   Power MOSFET

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 VDSS = ID25 = RDS(on) ≤ 55V 110A 6.6mΩ TO-263 (IXTA) Symbol VDSS VDGR VG
IXYS
IXYS
PDF
IXTA110N055T7   Power MOSFET

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/
IXYS Corporation
IXYS Corporation
PDF



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