डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA110N055T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T IXTP110N055T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 110 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILR |
IXYS Corporation |
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IXTA110N055T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IXTA110N055T2 | Power MOSFET Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA110N055T2 IXTP110N055T2
VDSS = ID25 =
RDS(on) ≤
55V 110A 6.6mΩ
TO-263 (IXTA)
Symbol VDSS VDGR
VG |
IXYS |
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IXTA110N055T7 | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA110N055T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 110 7.0
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/ |
IXYS Corporation |
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