डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXSN35N100U1 | IGBT IGBT with Diode
IXSN 35N100U1
VCES IC25 VCE(sat)
= 1000 V = 38 A = 3.5 V
High Short Circuit SOA Capability
3 2
4 www.DataSheet4U.com
1
Symbol V CES
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150 |
IXYS Corporation |
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IXSN35N100U1 | IGBT | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |