डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXKP20N60C5 | Power MOSFET IXKH 20N60C5 IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
D
ID25 = 20 A VDSS = 600 V RDS(on) max = 0.2 Ω
TO-247 AD (IXKH)
G
G D S S
|
IXYS |
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IXKP20N60C5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 180mΩ(Max) ·100% avalanche tested ·Min |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |