डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXKH30N60C5 | Power MOSFET IXKH 30N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
D
ID25 = 30 A VDSS = 600 V RDS(on) max = 0.125 Ω
TO-247 AD
G
G D S S
q D(TAB)
MOSFET |
IXYS |
|
IXKH30N60C5 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 125mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |