डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXGX32N170AH1 | High-Voltage IGBT High Voltage IGBT with Diode
IXGX 32N170AH1
VCES IC25 V
CE(sat)
tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES VCGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = |
IXYS |
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IXGX32N170AH1 | High-Voltage IGBT | IXYS |
www.DataSheet.in | 2017 | संपर्क |