डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFP36N20X3 | Power MOSFET X3-Class HiPERFETTM Power MOSFET
N-Channel Enhancement Mode
IXFY36N20X3 IXFA36N20X3 IXFP36N20X3
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25� |
IXYS |
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IXFP36N20X3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFP36N20X3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot |
INCHANGE |
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IXFP36N20X3M | Power MOSFET Preliminary Technical Information
X3-Class HiPerFETTM Power MOSFET
(Electrically Isolated Tab)
IXFP36N20X3M
VDSS = ID25 = RDS(on)
200V 36A 45m
N-Channel Enhancement Mode
OVERMOLDED TO-220
Symbol
VD |
IXYS |
|
IXFP36N20X3M | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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