IXFK420N10T डाटा शीट PDF( Datasheet )

Advance Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK420N10T IXFX420N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 420A 2.6

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-t