IXFH170N10P डाटा शीट PDF( Datasheet )

PolarTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH170N10P IXFK170N10P VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 170A 9mΩ 150ns TO-247 (IXFH) Symbol V

isc N-Channel MOSFET Transistor IXFH170N10P FEATURES ·Drain Current : ID= 170A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·100% avalanche te