डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFA110N15T2 | Power MOSFET Preliminary Technical Information
TrenchT2TM HiperFET Power MOSFET
IXFA110N15T2 IXFP110N15T2
VDSS = ID25 =
RDS(on)
150V 110A 13m
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGS |
IXYS Corporation |
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IXFA110N15T2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 13mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |