डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFA102N15T | Power MOSFET Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = 102A ≤ 18mΩ ≤ 120ns
TO-263 (IXFA)
G
S (TAB)
Symbol |
IXYS Corporation |
|
IXFA102N15T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXFA102N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |