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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXBH16N170A | High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 16 A = 6.0 V = 50 ns
Symbol VCES VCGR V |
IXYS Corporation |
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IXBH16N170 | BIMOSFET Monolithic Bipolar MOS Transistor | IXYS |
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IXBH16N170A | High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |