डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLZ24N | HEXFET POWER MOSFET www.DataSheet4U.com
PD - 91357C
HEXFET® Power MOSFET
l l l l l l
IRLZ24N
VDSS = 55V
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully |
International Rectifier |
|
IRLZ24N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ24N, IIRLZ24N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
|
IRLZ24NL | Power MOSFET www.DataSheet4U.com
PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching |
International Rectifier |
|
IRLZ24NLPBF | Power MOSFET www.DataSheet4U.com
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l |
International Rectifier |
|
IRLZ24NPBF | Power MOSFET www.DataSheet4U.com
PD - 94998
IRLZ24NPbF
•
Lead-Free
DataShee
DataSheet4U.com
www.irf.com
1
2/11/04
DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
IRLZ24NPbF
et4U.com
DataShee
DataShee |
International Rectifier |
|
IRLZ24NS | Power MOSFET www.DataSheet4U.com
PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching |
International Rectifier |
|
IRLZ24NS | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |