डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLZ24 | HEXFET POWER MOSFET www.DataSheet4U.com
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International Rectifier |
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IRLZ24 | N-Channel MOSFET www.DataSheet4U.com
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Samsung Electronics |
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IRLZ24 | Power MOSFET Power MOSFET
IRLZ24, SiHLZ24
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 5.0 V
18 4.5 12 Single
0.10
TO-220AB
D
S D G
G
S N-Channel MO |
Vishay |
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IRLZ24A | Advanced Power MOSFET www.DataSheet4U.com
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Samsung Electronics |
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IRLZ24L | Power MOSFET www.DataSheet.co.kr
IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 18 4.5 12 Single
D
FEATUR |
Vishay Siliconix |
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IRLZ24N | HEXFET POWER MOSFET www.DataSheet4U.com
PD - 91357C
HEXFET® Power MOSFET
l l l l l l
IRLZ24N
VDSS = 55V
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully |
International Rectifier |
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IRLZ24N | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRLZ24N, IIRLZ24N
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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