डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLR2905 | POWER MOSFET PD- 91334E
IRLR/U2905
HEXFET® Power MOSFET
l l l l l l l
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Aval |
International Rectifier |
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IRLR2905 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRLR2905, IIRLR2905
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤27mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi |
INCHANGE |
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IRLR2905PBF | POWER MOSFET IRLR/U2905PbF
l l l l l l l l
PD- 95084A
Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead- |
International Rectifier |
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IRLR2905Z | POWER MOSFET PD - 95848
AUTOMOTIVE MOSFET
IRLR2905Z IRLU2905Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ● ●
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Sw |
International Rectifier |
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IRLR2905Z | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRLR2905Z, IIRLR2905Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤13.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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IRLR2905ZPBF | POWER MOSFET PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to |
International Rectifier |
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