डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRLI2910 | POWER MOSFET PD - 9.1384B
PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Ava |
International Rectifier |
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IRLI2910 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 26mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus |
INCHANGE |
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IRLI2910PBF | Power MOSFET Lead-Free
PD- 95652
IRLI2910PbF
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IRLI2910Pb |
International Rectifier |
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IRLI2910PbF | Power MOSFET IRLI2910PbF
Logic –Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm |
Infineon |
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