डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL510 | Power MOSFET $GYDQFHG 3RZHU 026)(7
IRL510
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operati |
Fairchild Semiconductor |
|
IRL510 | HEXFET Power MOSFET www.DataSheet4U.com
|
International Rectifier |
|
IRL510 | Power MOSFET Power MOSFET
IRL510, SiHL510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
6.1
Qgs (nC)
2.6
Qgd (nC)
3.3
Configuration
Single
0.54
TO-220AB
D
S D G
G
S N-Ch |
Vishay Siliconix |
|
IRL510A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area |
Fairchild |
|
IRL510S | HEXFET POWER MOSFET |
IRF |
|
IRL510S | Power MOSFET www.vishay.com
IRL510S, SiHL510S
Vishay Siliconix
Power MOSFET
D D2PAK (TO-263)
G
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 |
Vishay |
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