डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRL3103 | Power MOSFET PD - 91337
IRL3103
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 30V R |
International Rectifier |
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IRL3103 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IRL3103,IIRL3103
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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IRL3103D1 | MOSFET & SCHOTTKY RECTIFIER PD 9.1608C
IRL3103D1
FETKYTM MOSFET & SCHOTTKY RECTIFIER
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Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Sync |
International Rectifier |
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IRL3103D1PBF | MOSFET & SCHOTTKY RECTIFIER • Lead-Free
PD - 94936
IRL3103D1PbF
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IRL3103D1PbF
TO-220AB Package |
International Rectifier |
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IRL3103D1S | MOSFET & SCHOTTKY RECTIFIER PD- 9.1558A
IRL3103D1S
FETKYTM MOSFET & SCHOTTKY RECTIFIER
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Co-packaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For S |
International Rectifier |
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IRL3103D2 | MOSFET & SCHOTTKY RECTIFIER PD 9.1660
PRELIMINARY
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IRL3103D2
D
FETKYTM MOSFET & SCHOTTKY RECTIFIER
Copackaged HEXFET® Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance |
International Rectifier |
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IRL3103D2PBF | MOSFET & SCHOTTKY RECTIFIER PD-95435
IRL3103D2PbF
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l Copackaged HEXFET® Power MOSFET
and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Syn |
International Rectifier |
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