डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGSL4B60KD1PbF | Insulated Gate Bipolar Transistor PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology. � |
International Rectifier |
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IRGSL4B60KD1PbF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |