IRGSL4B60KD1 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRGSL4B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR PD - 95616
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Po |
 International Rectifier |
|
| IRGSL4B60KD1PbF | Insulated Gate Bipolar Transistor PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology. � |
International Rectifier |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |