डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGS4615DPBF | Power MOSFET IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
G E
E G G C
C
C
C
E
VCE(on) typ. = 1.55V @ 8A
n-c |
International Rectifier |
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IRGS4615DPBF | Power MOSFET | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |