डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGS4607DPBF | Insulated Gate Bipolar Transistor
VCES = 600V IC = 7.0A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.75V @ IC = 4.0A
IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Dio |
International Rectifier |
|
IRGS4607DPBF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |