डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGPS66160DPBF | Insulated Gate Bipolar Transistor IRGPS66160DPbF
VCES = 600V IC = 160A, TC =100°C
tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A
Applications Welding H Bridge Converters
Insulated Gate Bipolar Transistor w |
International Rectifier |
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IRGPS66160DPBF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |