डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRGP6660DPBF | Insulated Gate Bipolar Transistor VCES = 600V
IC = 60A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Welding • H Bridge Converters
IRGP6660DPbF IRGP6660D-EPbF
Insulated Gate Bipolar Transistor wi |
International Rectifier |
|
IRGP6660DPBF | Insulated Gate Bipolar Transistor | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |