डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRG7SC12FPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 96363
IRG7SC12FPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Posi |
International Rectifier |
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IRG7SC12FPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
www.DataSheet.in | 2017 | संपर्क |