IRG7PH35U-EP डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the part |
 International Rectifier |
|
| IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the part |
International Rectifier |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |