डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ48V | Power MOSFET PD - 93959A
IRFZ48V
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for |
International Rectifier |
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IRFZ48V | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ48V, IIRFZ48V
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested |
INCHANGE |
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IRFZ48VPBF | Power MOSFET PD - 94992A
IRFZ48VPbF
l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Application |
International Rectifier |
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IRFZ48VS | Power MOSFET PD - 94051A
IRFZ48VS
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized fo |
International Rectifier |
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IRFZ48VS | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to- |
INCHANGE |
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IRFZ48VSPBF | Power MOSFET PD - 95573
IRFZ48VSPbF
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l L |
International Rectifier |
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