डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ40 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ40
FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Curren |
Inchange Semiconductor |
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IRFZ40 | (IRFZ40 - IRFZ45) N-Channel Power MOSFETS |
Samsung Electronics |
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IRFZ40 | (IRFZ40 / IRFZ42) Power Field Effect Transistors |
Motorola Semiconductor |
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IRFZ40 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRFZ40 IRFZ40FI
s s s s s s s
V DSS 50 V 50 V
R DS( on) < 0.028 Ω < 0.028 Ω
ID 50 A 27 A
TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUG |
ST Microelectronics |
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IRFZ40 | Power MOSFET Power MOSFET
IRFZ40, SiHFZ40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
67 18 25 Single
0.028
D
TO-220AB
G
S D G
S N-Channel MO |
Vishay |
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IRFZ40FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
IRFZ40 IRFZ40FI
VDSS
50 V 50 V
R DS( on)
< 0.028 Ω < 0.028 Ω
ID
50 A 27 A
s TYPICAL RDS(on) = 0.022 Ω s AVALANCHE RUGGED TECHNO |
STMicroelectronics |
|
IRFZ40FI | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ40FI
FEATURES ·Typical RDS(on) = 0.022 ·Avalanche Rugged Technology ·100% Avalanche Tested ·Low Gate Charge ·High Curr |
Inchange Semiconductor |
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