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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IRFZ34N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ34N
FEATURES ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully A |
Inchange Semiconductor |
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IRFZ34N | Power MOSFET PD - 94807
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling
Lead-Free
IRFZ34NPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS( |
International Rectifier |
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IRFZ34N | Power MOSFET IRFZ34N
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Fully Avalanche Rated
VDSS=55V RDS(on)=0.040Ω
ID=26A
Description
Fifth Generation HEX |
ART CHIP |
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IRFZ34NL | Power MOSFET PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche R |
International Rectifier |
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IRFZ34NLPBF | Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generatio |
International Rectifier |
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IRFZ34NPBF | HEXFET Power MOSFET PD - 94807
IRFZ34NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free Description
Fifth |
International Rectifier |
|
IRFZ34NS | Power MOSFET PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche R |
International Rectifier |
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