IRFZ24N डाटा शीट PDF( Datasheet )

www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor

www.DataSheet4U.com PD - 91354A IRFZ24N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V G S

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistan

www.DataSheet4U.com PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switch

IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A D N Channel G S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Symbol Test Conditions Value M

www.DataSheet4U.com PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(DPAK) packaging ·Surface mount ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable